Yb:YAG
 


 

Yb:YAG is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped systems. Compared with the  commonly used Nd:YAG crsytal , Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-laser level lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal is expected to replace Nd:YAG crystal for high power diode-pumped lasers and other potential applications. 

  

    1. Very low fractional heating, less than 11%                

    2. Very high slope efficiency

    3. Broad absorption bands, about 8nm@940nm

    4. No excited-state absorption or up-conversion

    5. Conveniently pumped by reliable InGaAs diodes

    6. At 940nm(or 970nm) High thermal conductivity

    7. High optical quality

 

 

 

 

The Sellmeier equations (°C in µm for YAG)

n ^2 = 2.08745 + 1.2081 °C ^2 /(°C^ 2 - 0.02119 )+ 17.2049 °C ^2 /(°C ^2 - 1404.45 )

 

 

 

Optical and Spectral Properties

 

Dopant concentration

Yb: 0.5 ~ 25 at%

Laser Transition

2 F 5/2 °C 2 F 7/2

Laser Wavelength

1030nm

Photon Energy

1.93×10-19J(@1030nm)

Emission Linewidth

9nm

Emission Cross Section

2.0×10-20cm 2

Fluorescence Lifetime

1.2 ms

Diode Pump Band

940nm or 970nm

Pump Absorption Band Width

8 nm

Index of Refraction

1.82

Thermal Optical Coefficient

9 × 10-6/ °C

Loss Coefficient

0.003 cm-1

 

 

Specifications

 

Orientation:

<111> or <100> crystalline within 5°

Wavefront distortion :

1/8 lambda per inch @ 633 nm

Extinction Ratio:

>25dB

Dimension Tolerances

Rods with diameter: ±0.025 mm , Length: ±0.5 mm

Surface quality:

10/5 Scratch / Dig per MIL-O-1380A

Parallelism:

< 10 arc seconds

Perpendicularity:

< 5 arc minutes

Flatness:

< 1/10 lambda @ 633 nm

chamfer:

<0.1 mm @ 45deg.

Barrel Finish:

50-80 micro-inch (RMS) ,

AR Coating Reflectivity

<= 0.25%

 

 

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